Actualidad, perspectivas del desarrollo de la obtención de Silicio (página 3)
Tabla 1: Distribución de los costos
aproximados por etapas de producción de un modulo
fotovoltaico a partir de las materias primas
Tabla 2: Capacidad Fotovoltaica | ||||||||||||||
PAIS | 1992 | 1993 | 1994 | 1995 | 1996 | 1997 | 1998 | 1999 | 2000 | 2001 | 2002 | 2003 | 2004 | 2005 |
AUS | 7,3 | 8,9 | 10,7 | 12,7 | 15,7 | 18,7 | 22,5 | 25,3 | 29,2 | 33,6 | 39,6 | 45,6 | 52,3 | 60,6 |
AUT | 0,6 | 0,8 | 1,1 | 1,4 | 1,7 | 2,2 | 2,9 | 3,7 | 4,9 | 6,1 | 10,3 | 16,8 | 21,1 | 24,0 |
CAN | 1,0 | 1,2 | 1,5 | 9,9 | 2,6 | 3,4 | 4,5 | 5,8 | 7,2 | 8,8 | 10,0 | 11,8 | 13,9 | 16,7 |
CHE | 4,7 | 5,8 | 6,7 | 7,5 | 8,4 | 9,7 | 11,5 | 13,4 | 15,3 | 17,6 | 19,5 | 21,0 | 23,1 | 27,1 |
DNK | 0,1 | 0,1 | 0,1 | 0,2 | 0,4 | 0,5 | 1,1 | 1,5 | 1,5 | 1,6 | 9,9 | 2,3 | 2,7 | |
DEU | 5,6 | 8,9 | 12,4 | 17,7 | 27,8 | 41 ,8 | 53,8 | 69,4 | 113,7 | 194,6 | 278,0 | 431,0 | 794,0 | 1429 |
ESP | 4,0 | 4,6 | 5,7 | 6,5 | 6,9 | 7,1 | 8,0 | 9,1 | 12,0 | 15,7 | 20,5 | 27,0 | 37,0 | 57,4 |
FIN | 0,9 | 1,0 | 1,2 | 1,3 | 1,5 | 2,0 | 2,2 | 2,3 | 2,6 | 2,7 | 3,0 | 3,4 | ||
FRA | 1,8 | 2,0 | 2,4 | 2,9 | 4,4 | 6,1 | 7,6 | 9,1 | 11,3 | 13,9 | 17,2 | 21.1 | 26,0 | 33,0 |
GBR | 0,2 | 0,3 | 0,3 | 0,4 | 0,4 | 0,6 | 0,7 | 1,1 | 1,9 | 2,7 | 4,1 | 5,9 | 8,2 | 10,9 |
ISR | 0,1 | 0,1 | 0,2 | 0,2 | 0,2 | 0,3 | 0,3 | 0,4 | 0,4 | 0,5 | 0,5 | 0,5 | 0,9 | 1,0 |
ITA | 8,5 | 12,0 | 14,0 | 15,8 | 16,0 | 16,7 | 17,7 | 18,5 | 19,0 | 20,0 | 22,0 | 26,0 | 30,7 | 37,5 |
JPN | 19,0 | 24,3 | 31,2 | 43,4 | 59,6 | 91,3 | 133,4 | 208,6 | 330,2 | 452,8 | 636,8 | 859,6 | 1132 | 1142,9 |
KOR | 1,5 | 1,6 | 1,7 | 1,8 | 2,1 | 2,5 | 3,0 | 3,5 | 4,0 | 4,8 | 5,4 | 6,0 | 8,5 | 15,0 |
MEX | 5,4 | 7,1 | 8,8 | 9,2 | 10,0 | 11,0 | 12,0 | 12,9 | 13,9 | 15,0 | 16,2 | 17,1 | 18,2 | 18,7 |
NLD | 1,3 | 1,6 | 2,0 | 2,4 | 3,3 | 4,0 | 6,5 | 9,2 | 12,8 | 20,5 | 26,3 | 45,9 | 49,1 | 50,8 |
NOR | 3,8 | 4,1 | 4,4 | 4,7 | 4,9 | 5,2 | 5,4 | 5,7 | 6,0 | 6,2 | 6,4 | 6,6 | 6,9 | 7,3 |
PRT | 0,2 | 0,2 | 0,3 | 0,3 | 0,4 | 0,5 | 0,6 | 0,9 | 1,1 | 1,3 | 1,7 | 2,1 | 2,6 | 3,0 |
SWE | 0,8 | 1,0 | 1,3 | 1,6 | 1,8 | 2,1 | 2,4 | 2,6 | 2,8 | 3,0 | 3,3 | 3,6 | 3,9 | 4,2 |
USA | 43,5 | 50,3 | 57,8 | 66,8 | 76,5 | 88,2 | 100,1 | 117,3 | 138,8 | 167,8 | 212,2 | 275,2 | 376 | 479 |
Total | 110 | 136 | 164 | 199 | 245 | 314 | 396 | 520 | 729 | 989 | 1 334 | 1 828 | 2 607 | 3 700 |
Tabla 3: El costo de producción de 1Wp de modulo
instalado listo para ser explotado acorde al mercado de varios
países en distintos continentes
Tabla 7: Relación y cantidad de
empresas especializadas en la producción de componentes de
los módulos y distribución de los mismos
14. OTRAS FUENTES DE INFORMACIÓN
RELACIONADAS ESPECIALMENTE CON LA PROTECCIÓN E HIGIENE
DE LA SALUD EN EL ÁMBITO DE LA PRODUCCIÓN DE
SILICIO PURO Y SU PROCESAMIENTO HASTA LA CELDA
FOTOVOLTAICA1. American National Standards Institute
(ANSI). 1986.Safety Standard for Industrial Robots and
Industrial Robot Systems. ANSI/RIA R15.06-1986. Nueva York:
ANSI.2. ASKMAR. 1990. Computer Industry: Critical
Trends for the 1990"s. Saratoga, California: Electronic Trend
Publications.3. Asom, MT, J Mosovsky, RE Leibenguth, JL
Zilko, G Cadet. 1991. Transient arsine generation during
opening of solid source MBE chambers. J Cryst Growth
112(2-3):597–599.4. Association of the Electronics,
Telecommunications and Business Equipment Industries (EEA).
1991. Guidelines on the Use of Colophony (Rosin) Solder
Fluxes in the Electronics Industry. Londres: Leichester House
EEA.5. Baldwin, DG, BW King, LP Scarpace. 1988. Ion
implanters: Chemical and radiation safety. Solid State
Technology 31(1):99–105.6. Baldwin, DG, JH Stewart. 1989. Chemical and
radiation hazards in semiconductor anufacturing. Solid State
Technology 32(8):131–135.7. Baldwin, DG, JR Rubin, MR Horowitz. 1993.
Industrial hygiene exposures in semiconductor manufacturing.
SSA Journal 7(1):19–21.8. Baldwin, DG, ME Williams. 1996. Industrial
hygiene.En Semiconductor Safety Handbook, dirigido por JD
Bolmen. Park Ridge, Nueva Jersey: Noyes.9. Baldwin, DG. 1985. Chemical exposure from
carbon tetrachloride plasma aluminum etchers. Extended
Abstracts, Electrochem Soc 85(2):449–450.10. Bauer, S, I Wolff, N Werner, P Hoffman.
1992a. Health hazards in the semiconductor industry, a
review. Pol J Occup Med 5(4):299–314.11. Bauer, S, N Werner, I Wolff, B Damme, B
Oemus, P Hoffman. 1992b. Toxicological investigations in the
semiconductor industry: II. Studies on the subacute
inhalation toxicity and genotoxicity of gaseous waste
products from the aluminum plasma etching process. Toxicol
Ind Health 8(6):431–444.12. Bliss Industries. 1996. Solder Dross
Particulate Capture System Literature. Fremont, California:
Bliss Industries.13. Bureau of Labor Statistics (BLS). 1993.
Annual Survey of Occupational Injuries and Illnesses.
Washington, DC: BLS, US Department of Labor.14. Bureau of Labor Statistics (BLS). 1995.
Employment and Wages Annual Averages, 1994. Bulletin. 2467.
Washington, DC: BLS, US Department of Labor.15. Clark, RH. 1985. Handbook of Printed
Circuit Manufacturing. NuevaYork: Van Nostrand Reinhold
Company.16. Cohen, R. 1986. Radiofrequency and
microwave radiation in microelectronics industry. En State of
the Art Reviews—Occupational Medicine: The
icroelectronics Industry, dirigido por J LaDou. Filadelfia,
Pensilvania: Hanley & Belfus, Inc.17. Conferencia Americana de Higienistas
Industriales del Gobierno (ACGIH). 1989. Hazard Assessment
and Control Technology in Semiconductor Manufacturing.
Chelsea, Michigan: Lewis Publishers.18. Conferencia Americana de Higienistas
Industriales del Gobierno. 1993. Hazard Assessment and
Control Technology in Semiconductor Manufacturing II.
Cincinnati, Ohio: ACGIH.19. Conferencia Americana de Higienistas
Industriales del Gobierno. 1994. Documentation of Threshold
Limit Value, Rosin Core Solder Thermal Decomposition
Products, as Resin Acids-Colophony. Cincinnati, Ohio:
ACGIH.20. Content, RM. 1989. Control methods for
metal and metalloids in III-V materials vapour -phase
epitaxy. En Hazard Assessment and Control Technology in
Semiconductor Manufacturing, dirigido por la Conferencia
Americana de Higienistas Industriales del Gobierno. Chelsea,
Michigan: Lewis Publishers.21. Coombs, CF. 1988. Printed Circuits
Handbook, 3ª ed. NuevaYork: McGraw-Hill Book
Company.22. Correa A, RH Gray, R Cohen, N Rothman, F
Shah,H Seacat, M Corn. 1996. Ethylene glycol ethers and risks
of spontaneous abortion and subfertility. Am J
Epidemiol 143(7):707–717.23. Crawford, WW, D Green, WR Knolle, HM
Marcos, JA Mosovsky, RC Petersen, PA Testagrossa, GH Zeman.
1993. Magnetic field exposure in semiconductor24. cleanrooms. En Hazard Assessment and
Control Technology in Semiconductor Manufacturing II.
Cincinnati, Ohio: ACGIH.25. Escher, G, J Weathers, B Labonville. 1993.
Safety design considerations in deep-UV excimer laser
photolithography. En Hazard Assessment and Control
Technology in Semiconductor Manufacturing II.
Cincinnati, Ohio: Conferencia Americana de Higienistas
Industriales del Gobierno.26. Eskenazi B, EB Gold, B Lasley, SJ Samuels,
SK Hammond, S Wright, MO Razor, CJ Hines, MB Schenker. 1995.
Prospective monitoring of early fetal loss and clinical
spontaneous abortion among female semiconductor workers.
Am J Indust Med 28(6):833–846.27. Flipp, N, H Hunsaker, P Herring. 1992.
Investigation of hydride emissions during the maintenance of
ion implantation equipment. Presentado en la American
Industrial Hygiene Conference de junio1992,
Boston—Paper 379 (no publicado).28. Goh, CL, SK Ng. 1987. Airborne contact
dermatitis to colophony in soldering flux. Contact
Dermatitis 17(2):89–93.29. Hammond SK, CJ Hines MF Hallock, SR Woskie,
SAbdollahzadeh, CR Iden, E Anson, F Ramsey, MB Schenker.
1995. Tiered exposure assessment strategy in the
Semiconductor Health Study. Am J Indust Med
28(6):661–680.30. Harrison, RJ. 1986. Gallium arsenide. En
State of the Art Reviews—Occupational Medicine: The
Microelectronics Industry, publicado por J LaDou
Filadelfia, Pensilvania: Hanley & Belfus, Inc.31. Hathaway, GL, NH Proctor, JP Hughes, ML
Fischman. 1991. Chemical Hazards of the Workplace,
3ª ed. Nueva York: Van Nostrand Reinhold.32. Hausen, BM, K Krohn, E Budianto. 1990.
Contact allergy due to colophony (VII). Sensitizing studies
with oxidation products of abietic acid and related acids.
Contact Dermat 23(5):352–358.33. Health and Safety Commission. 1992.
Approved Code of Practice—Control of Respiratory
Sensitizers. Londres: Health and Safety
Executive.34. Helb, GK, RE Caffrey, ET Eckroth, QT
Jarrett, CL Fraust, JA Fulton. 1983. Plasma processing: Some
safety, health and engineering considerations. Solid
State Technology 24(8):185–194.35. Hines, CJ, S Selvin, SJ Samuels, SK
Hammond, SR Woskie, MF Hallock, MB Schenker. 1995.
Hierarchical cluster analysis for exposure assessment of
workers in the Semiconductor Health Study. Am J Indust
Med 28(6):713–722.36. Horowitz, MR. 1992. Nonionizing radiation
issues in a semiconductor R and D facility. Presentado en la
American Industrial Hygiene Conference de junio 1992,
Boston—Paper 122 (no publicado).37. Jones, JH. 1988. Exposure and control
assessment of semiconductor manufacturing. AIP Conf.
Proc. (Photovoltaic Safety) 166:44–53.38. LaDou, J (dir.). 1986. State of the Art
Reviews—Occupational Medicine: The Microelectronics
Industry. Filadelfia, Pensilvania: Hanley and Belfus,
Inc.39. Lassiter, DV. 1996. Work injury and illness
surveillance on an international basis. Acta de la Third
InternationalESHConference, Monterrey, California.40. Leach-Marshall, JM. 1991. Analysis of
radiation detected from exposed process elements from the
krypton-85 fine leak testing system. SSA Journal
5(2):48–60.41. Lead Industries Association. 1990.
Safety in Soldering, Health Guidelines for Solderers and
Soldering. Nueva York: Lead Industries Association,
Inc.42. Lenihan, KL, JK Sheehy, JH Jones. 1989.
Assessment of exposures in gallium arsenide processing: A
case study. En Hazard Assessment and Control Technology
in Semiconductor Manufacturing, dirigido por la
Conferencia Americana de Higienistas Industriales del
Gobierno. Chelsea, Michigan: Lewis Publishers.43. Maletskos, CJ, PR Hanley. 1983. Radiation
protection considerations of ion implantation systems.
IEEE Trans on Nuclear Science
NS-30:1592–1596.44. McCarthy, CM. 1985. Worker Exposure
during Maintenance of Ion Implanters in the Semiconductor
Industry. Tesis de master, Universidad de Utah, Salt
Lake City,45. Utah, 1984. Compilado en Extended
Abstracts, Electrochem Soc 85(2):448. McCurdy SA, C
Pocekay, KS Hammond, SR Woskie, SJ Samuels, MB Schenker.
1995. A crosssectional survey of respiratory and general
health outcomes among semiconductor industry workers. Am
J Indust Med 28(6):847–860.46. McIntyre, AJ, BJ Sherin. 1989. Gallium
arsenide: hazards, assessment, and control. Solid State
Technology 32(9):119–126.47. Microelectronics and Computer Technology
Corporation (MCC). 1994. Electronics Industry
Environmental Roadmap. Austin, Texas: MCC.48. —. 1996. Electronics Industry
Environmental Roadmap. Austin, Texas: MCC.49. Mosovsky, JA, D Rainer, T Moses, WE Quinn.
1992. Transient hydride generation during IIIsemiconductor
processing. Appl Occup Environ Hyg
7(6):375–384.50. Mueller, MR, RF Kunesh. 1989. Safety and
health implications of dry chemical etchers. En Hazard
Assessment and Control Technology in Semiconductor
Manufacturing, dirigido por la Conferencia Americana de
Higienistas Industriales del Gobierno. Chelsea, Michigan:
Lewis Publishers.51. O"Mara, WC. 1993. Liquid Crystal Flat
Panel Displays. Nueva York: Van Nostrand
Reinhold.52. PACE Inc. 1994. Fume Extraction
Handbook. Laurel, Maryland: PACE Inc.53. Pastides, H, EJ Calabrese, DW Hosmer, Jr,
DR Harris. 1988. Spontaneous abortion and general illness
symptoms among semiconductor manufacturers. J Occup
Med 30:543–551.54. Pocekay D, SA McCurdy, SJ Samuels, MB
Schenker. 1995. A cross-sectional study of musculoskeletal
symptoms and risk factors in semiconductor workers. Am J
Indust Med 28(6):861–871.55. Rainer, D, WE Quinn, JA Mosovsky, MT
Asom.1993. III-V transient hydride generation, Solid
State Technology 36(6):35–40.56. Rhoades, BJ, DG Sands, VD Mattera. 1989.
Safety and environmental control systems used in chemical
vapor deposition (CVD) reactors at
AT&T–Microelectronics-Reading. Appl Ind
Hyg 4(5):105–109.57. Rogers, JW. 1994. Radiation safety in
semiconductors. Presentado en la Semiconductor Safety
Association Conference de abril 1994, Scottsdale, AZ (no
publicado).58. Rooney, FP, J Leavey. 1989. Safety and
health considerations of an x-ray lithography source. En
Hazard Assessment and Control Technology in Semiconductor
Manufacturing, publicado por la Conferencia Americana de
Higienistas Industriales del Gobierno. Chelsea, Michigan:
Lewis Publishers.59. Rosenthal, FS, S Abdollahzadeh. 1991.
Assessment of extremely low frequency (ELF) electric and
magnetic fields in microelectronics fabrication rooms.
Appl Occup Environ Hyg 6(9):777–784
Autor:
Dr. Lic. Rafael Quintana Puchol
M. Sc. Ing. Jorge Luis Garcia Jacomino
Dr. Lorenzo Perdomo Gonzalez
Ing. Vladimir Rodriguez Palmeo
Centro de Investigación de Soldadura
(CIS)
Facultad de Ingeniería
Mecánica
Universidad Central "Marta Abreu" de Las
Villas
Carretera a Camajuaní Km.
5½
Santa Clara, Villa Clara, CP.
54830
Cuba
? (53) (42) 223983
Página anterior | Volver al principio del trabajo | Página siguiente |