Transistor 2n2222
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MOTOROLASEMICONDUCTOR TECHNICAL DATA
Order this document by P2N2222A/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
P2N2222A
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to …ver más…
DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3 0.5 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
P2N2222A
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 t′s = ts – 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C
t, TIME (ns)
tf
Figure 5. Turn – On Time
Figure 6. Turn – Off Time
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE
10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 µA 100 µA 500 µA 1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0 50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f,